sma6j5.0 thru 40a vishay semiconductors formerly general semiconductor document number 88389 www.vishay.com 07-may-02 1 new product surface mount t rans z orb transient voltage suppressors stand-off voltage 5.0 to 40v peak pulse power 600w maximum ratings & thermal characteristics ratings at 25? ambient temperature unless otherwise specified. parameter symbol value unit peak pulse power dissipation with p ppm 600 w a 10/1000 s waveform (1,2) (see fig. 1) peak pulse current with a 10/1000 s waveform (1) i ppm see next table a peak forward surge current 8.3ms single half sine-wave i fsm 70 a uni-directional only (2) typical thermal resistance, junction to ambient (3) r ja 110 ?/w typical thermal resistance, junction to lead r jl 25 ?/w operating junction and storage temperature range t j , t stg 55 to +150 ? notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25? per fig. 2 (2) mounted on 0.2 x 0.2 (5.0 x 5.0mm) copper pads to each terminal (3) mounted on minimum recommended pad layout 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) max. 0.194 (4.93) 0.208 (5.28) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band dimensions in inches and (millimeters) do-214ac (sma) features plastic package has underwriters laboratory flammability classification 94v-0 optimized for lan protection applications ideal for esd protection of data lines in accordance with iec 1000-4-2 (iec801-2) ideal for eft protection of data lines in accordance with iec 1000-4-4 (iec801-4) low profile package with built-in strain relief for surface mounted applications glass passivated junction low incremental surge resistance, excellent clamping capability 600w peak pulse power capability with a 10/1000 s waveform, repetition rate (duty cycle): 0.01% very fast response time mechanical data case: jedec do-214ac molded plastic over passivated chip terminals: solder plated, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250 c/10 seconds at terminals polarity: the band denotes the cathode, which is positive with respect to the anode under normal tvs operation mounting position: any weight: 0.002 oz., 0.064 g packaging codes ?options (antistatic): 51 1k per bulk box, 20k/carton 61 1.8k per 7" plastic reel (12mm tape), 36k/carton 5a 7.5k per 13" plastic reel (12mm tape), 75k/carton 0.094 max. (2.38 max.) 0.220 (5.58) ref 0.066 min. (1.68 min.) 0.052 min. (1.32 min.) mounting pad layout
sma6j5.0 thru 40a vishay semiconductors formerly general semiconductor www.vishay.com document number 88389 2 07-may-02 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. v f = 3.5v at i f = 25a (uni-directional only) device breakdown maximum maximum maximum device type marking voltage test stand-off reverse leakage peak pulse surge clamping code v (br) (v) (1) current voltage at v wm current i ppm voltage at i ppm min max at i t (ma) v wm (v) i d ( a) (a) (2) v c (v) sma6j5.0 6ad 6.40 7.82 10 5.0 800 62.5 9.6 sma6j5.0a 6ae 6.40 7.07 10 5.0 800 65.2 9.2 sma6j6.0 6af 6.67 8.15 10 6.0 800 52.6 11.4 sma6j6.0a 6ag 6.67 7.37 10 6.0 800 58.3 10.3 sma6j6.5 6ah 7.22 8.82 10 6.5 500 48.8 12.3 sma6j6.5a 6ak 7.22 7.98 10 6.5 500 53.6 11.2 sma6j7.0 6al 7.78 9.51 10 7.0 200 45.1 13.3 sma6j7.0a 6am 7.78 8.60 10 7.0 200 50.0 12.0 sma6j7.5 6an 8.33 10.2 1.0 7.5 100 42.0 14.3 sma6j7.5a 6ap 8.33 9.21 1.0 7.5 100 46.5 12.9 sma6j8.0 6aq 8.89 10.9 1.0 8.0 50 40.0 15.0 sma6j8.0a 6ar 8.89 9.83 1.0 8.0 50 44.1 13.6 sma6j8.5 6as 9.44 11.5 1.0 8.5 10 37.7 15.9 sma6j8.5a 6at 9.44 10.4 1.0 8.5 10 41.7 14.4 sma6j9.0 6au 10.0 12.2 1.0 9.0 5.0 35.5 16.9 sma6j9.0a 6av 10.0 11.1 1.0 9.0 5.0 39.0 15.4 sma6j10 6aw 11.1 13.6 1.0 10 1.0 31.9 18.8 sma6j10a 6ax 11.1 12.3 1.0 10 1.0 35.3 17.0 sma6j11 6ay 12.2 14.9 1.0 11 1.0 29.9 20.1 sma6j11a 6az 12.2 13.5 1.0 11 1.0 33.0 18.2 sma6j12 6bd 13.3 16.3 1.0 12 1.0 27.3 22.0 sma6j12a 6be 13.3 14.7 1.0 12 1.0 30.2 19.9 sma6j13 6bf 14.4 17.6 1.0 13 1.0 25.2 23.8 sma6j13a 6bg 14.4 15.9 1.0 13 1.0 27.9 21.5 sma6j14 6bh 15.6 19.1 1.0 14 1.0 23.3 25.8 sma6j14a 6bk 15.6 17.2 1.0 14 1.0 25.9 23.2 sma6j15 6bl 16.7 20.4 1.0 15 1.0 22.3 26.9 sma6j15a 6bm 16.7 18.5 1.0 15 1.0 24.6 24.4 sma6j16 6bn 17.8 21.8 1.0 16 1.0 20.8 28.8 sma6j16a 6bp 17.8 19.7 1.0 16 1.0 23.1 26.0 sma6j17 6bq 18.9 23.1 1.0 17 1.0 19.7 30.5 sma6j17a 6br 18.9 20.9 1.0 17 1.0 21.7 27.6 sma6j18 6bs 20.0 24.4 1.0 18 1.0 18.6 32.2 sma6j18a 6bt 20.0 22.1 1.0 18 1.0 20.5 29.2 sma6j20 6bu 22.2 27.1 1.0 20 1.0 16.8 35.8 sma6j20a 6bv 22.2 24.5 1.0 20 1.0 18.5 32.4 sma6j22 6bw 24.4 29.8 1.0 22 1.0 15.2 39.4 sma6j22a 6bx 24.4 26.9 1.0 22 1.0 16.9 35.5 sma6j24 6by 26.7 32.6 1.0 24 1.0 14.0 43.0 sma6j24a 6bz 26.7 29.5 1.0 24 1.0 15.4 38.9 sma6j26 6cd 28.9 35.3 1.0 26 1.0 12.9 46.6 sma6j26a 6ce 28.9 31.9 1.0 26 1.0 14.3 42.1 sma6j28 6cf 31.1 38.0 1.0 28 1.0 12.0 50.0 sma6j28a 6cg 31.1 34.4 1.0 28 1.0 13.2 45.4 sma6j30 6ch 33.3 40.7 1.0 30 1.0 11.2 53.5 sma6j30a 6ck 33.3 36.8 1.0 30 1.0 12.4 48.4 notes: (1) v (br) measured after i t applied for 300 s square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35
sma6j5.0 thru 40a vishay semiconductors formerly general semiconductor document number 88389 www.vishay.com 07-may-02 3 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. v f = 3.5v at i f = 25a (uni-directional only) device breakdown maximum maximum maximum device type marking voltage test stand-off reverse leakage peak pulse surge clamping code v (br) (v) (1) current voltage at v wm current i ppm voltage at i ppm min max at i t (ma) v wm (v) i d ( a) (a) (2) v c (v) sma6j33 6cl 36.7 44.9 1.0 33 1.0 10.2 59.0 SMA6J33A 6cm 36.7 40.6 1.0 33 1.0 11.3 53.3 sma6j36 6cn 40.0 48.9 1.0 36 1.0 9.3 64.3 sma6j36a 6cp 40.0 44.2 1.0 36 1.0 10.3 58.1 sma6j40 6cq 44.4 54.3 1.0 40 1.0 8.4 71.4 sma6j40a 6cr 44.4 49.1 1.0 40 1.0 9.3 64.5 notes: (1) v (br) measured after i t applied for 300 s square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35
sma6j5.0 thru 40a vishay semiconductors formerly general semiconductor www.vishay.com document number 88389 4 07-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 25 50 75 100 0 75 25 50 100 125 150 175 200 peak pulse power (p pp ) or current (i ppm ) derating in percentage, % t a ambient temperature ( c) 1 5 10 50 100 t p pulse duration (sec) fig. 2 pulse derating curve 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas transient thermal impedance ( c/w) fig. 5 typical transient thermal impedance fig. 6 - maximum non-repetitive forward surge current uni-directional only i fsm peak forward surge current (a) number of cycles at 60 hz c j junction capacitance (pf) 10 100 1,000 10,000 10 1 100 v wm reverse stand-off voltage (v) 10 50 100 fig. 4 typical junction capacitance 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0 50 100 150 i ppm peak pulse current, % i rsm fig. 3 pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak value i ppm half value ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t time (ms) p ppm peak pulse power (kw) fig. 1 peak pulse power rating curve 0.1 1 10 100 0.1 s 1.0 s10 s t d pulse width (sec.) 100 s 1.0ms 10ms 0.2 x 0.2" (0.5 x 0.5mm) copper pad areas non-repetitive pulse waveform shown in fig. 3 t a = 25 c measured at zero bias 8.3ms single half sine-wave (jedec method) uni-directional measured at stand-off voltage, v wm t j = 25 c f = 1.0mhz
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